产品详情
| 产品特性:节能 | 是否进口:否 | 品牌:Siemens/西门子 |
| 型号:A5E31307048 | 产品系列:GH180 | 应用范围:平方转矩 |
| 电源相数:三相 | 额定电压:三相AC690V | 适配电机功率:5600kW |
| 供电电压:高压 | 滤波器:内置1A滤波器 | 直流电源性质:电压型 |
| 控制方式:电压矢量 | 输出电压调节方式:PWM控制 | 外型:柜式 |
| 营销方式:代理 | 物料编号:A5E31307048 | 外形尺寸(宽x高x厚):520*420*220mm |
A5E31307048西门子G4 260A功率单元 罗宾康无谐波变频器详细介绍
功率单元是使用功率电力电子器件进行整流、滤波、逆变的高压变频器部件,是构成高压变频器主回路的主要部分,其作用是整流。功率单元通过输入三相电压经二极管模块进行全波不可控整流后,再经过铝电解电容的储能、滤波,再通过IGBT将直流逆变成交流,并串入系统中。功率单元安装在单元柜内。所有单元的机械和电气参数相同,所以它们可以方便地进行互换。每个单元(含单元控制板)通过光纤用来与系统进行通讯,该通讯是单元与控制柜内的主控部分之间的唯一连接,因而每个单元与主控系统完全电气隔离。
高压变频器本身就是一个干扰源,电路部分由功率半导体组成的主回路和由电子板件组成的控制回路两大部分组成。高压变频器主回路主要由整流电路,逆变电路,驱动电路组成。其中整流电路和逆变电路由功率半导体器件组成,功率半导体具有非线性特性,当高压变频器运行时,功率半导体进行快速开通和关断动作,因而会产生高次谐波和很高的dv/dt,这样高压变频器输出波形除基波外还含有大量高次谐波。高次谐波可能以串扰或辐射的形式进入客户DCS或PLC系统,引起系统对高压变频器控制瞬时失效。
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型号 |
描述 |
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LDZ469718.00C |
COMP ASSEMBLY MICROPROCESSOR |
|
LDZ085868C |
FIBER OPTIC ASY, DUPLEX, 8METE |
|
LDZ1051378 |
SW, Door interlock |
|
LDZ094726C |
PTC OVER TEMP. PROTECTOR |
|
LDZ094595C |
PTC OVER TEMP. PROTECTOR |
|
A1A094726 |
PTC OVER TEMP. PROTECTOR |
|
A1A094595 |
PTC OVER TEMP. PROTECTOR |
|
LDZ10500424.040 |
GEN4 CELL ASSEMBLY KIT 40A |
|
LDZ10500424.070 |
GEN4 CELL ASSEMBLY KIT 70A |
|
LDZ10500424.100 |
GEN4 CELL ASSEMBLY KIT 100A |
|
LDZ10500424.140 |
GEN4 CELL ASSEMBLY KIT 140A |
|
LDZ10500494.200 |
GEN4 CELL ASSEMBLY KIT 200A |
|
LDZ10500494.260 |
GEN4 CELL ASSEMBLY KIT 260A |
|
A5E33094595(A5E33115305) |
G4 CELL |
|
A5E32855090(A5E33115306) |
G4 CELL |
|
A5E33096198(A5E33115308) |
G4 CELL |
|
A5E32539903(A5E33115309) |
G4 CELL |
|
A5E35494212 |
G4 CELL |
|
LDZ10506547 replaced LDZ10506536 |
FUSE SEMICONDUCTOR 100A 1000V |
|
LDZ10506548 replaced LDZ10506537 |
FUSE SEMICONDUCTOR 160A,1000V |
|
LDZ10506549 replaced LDZ10506538 |
FUSE SEMICONDUCTOR 200A,1000V |
|
LDZ10506539 |
FUSE SEMICONDUCTOR,250A,1000V |
|
A5E02547653 replaced LDZ10506540 |
FUSE_DEVICE_450A_1.25kV |
|
A5E31476702 |
FUSE |
|
A5E31476700 |
FUSE |
|
A5E31476394 |
FUSE |
|
A5E31556481 |
FUSE |
|
LDZ10501376 |
CURR TRNSDCR,CLSD LOOP,2000A |
|
A1A093207 |
DEIONIZE-MIXED BED TYPE |
|
A1A461J63.01250H |
WCLL POWER CELL |
|
A1A10000313.00 |
ASSY,BASIC CHASSIS,NXG,8 SLOT |
|
A5E03931016 |
ASSY,BASIC CHASSIS,NXG,8 SLOT |
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A1A099609 |
DEIONIZER TANK,MIXED BED TYPE |
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LDZ164372.26C |
CURR XDUCER BURDEN,88.65ohm |
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LDZ164372.42C |
CURR XDUCER BURDEN,63.13ohm |
|
LDZ164372.47C |
CURR XDUCER BURDEN, 34.00 ohm |
|
A1A164372.26 |
CURR XDUCER BURDEN,88.65ohm |
|
A1A164372.42 |
CURR XDUCER BURDEN,63.13ohm |
|
A1A164372.47 |
CURR XDUCER BURDEN, 34.00 ohm |
|
A1A164372.46 |
CURR XDUCER BURDEN,44.19 OHM |
|
A1A164372.48 |
CURR XDUCER BURDEN,126.27 OHM |
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LDZ10503256 |
RESISTOR 350W 4.5K |
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A5E35632577 |
POWER_SPLY_UPS_220V |
|
LDZ10501360 |
POWER SUPPLY |
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A5E33980677 |
POWER SUPPLY |
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A5E33980468 |
POWER SUPPLY |
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A5E33032455 |
NXGPRO DCR |
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A5E33032452 |
NXGPRO DCR |
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A5E33032458 |
NXGPRO DCR |
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A5E32100313 |
IO BOARD |
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A5E37876282 |
POWER SUPPLY |
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A5E36968571 |
SIB w/o Out Fltr CT |













